smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter bcx69 features for general af applications. high collector current. high current gain. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current i c 1a peak collector current i cm 2a base current i b 100 ma peak base current i bm 200 ma total power dissipation p tot 1w junction temperature t j 150 storage temperature t stg -65to+150 junction - soldering point r thjs 20 k/w smd type transistors smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 20 v collector-base breakdown voltage v (br)cbo i c =10a,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =1a,i c =0 5 v v cb =25v,i e = 0 100 na v cb =25v,i e =0,t a = 150 100 a dc current gain * h fe i c =5ma,v ce =10v 50 bcx69 85 375 dc current gain * BCX69-10 85 100 160 bcx69-16 100 160 250 bcx69-25 160 250 375 dc current gain * h fe i c =1a,v ce =1v 60 collector-emitter saturation voltage * v ce(sat) i c =1a,i b = 100 ma 0.5 base-emitter voltage * v be(on) i c =5ma,v ce =10v 0.6 i c =1a,v ce =1v 1 transition frequency f t i c = 100 ma, v ce = 5 v, f = 20 mhz 100 mhz * pulse test: t 300s, d = 2%. v i cbo collector cutoff current h fe i c = 500 ma, v ce =1v h fe classification type bcx69 BCX69-10 bcx69-16 bcx69-25 marking ce cf cg ch smd type transistors bcx69 smd type transistors smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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